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 BUZ 76 A
SIPMOS (R) Power Transistor
* N channel * Enhancement mode * Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 76 A
VDS
400 V
ID
2.7 A
RDS(on)
2.5
Package TO-220 AB
Ordering Code C67078-S1315-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 2.7 Unit A
ID IDpuls
11
TC = 23 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
3 5 mJ
ID = 3 A, VDD = 50 V, RGS = 25 L = 35 mH, Tj = 25 C
Gate source voltage Power dissipation 180
VGS Ptot
20 40
V W
TC = 25 C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 3.1 75 E 55 / 150 / 56
C K/W
1
07/96
BUZ 76 A
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
400 3 0.1 10 10 2 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
A
VDS = 400 V, VGS = 0 V, Tj = 25 C VDS = 400 V, VGS = 0 V, Tj = 125 C
Gate-source leakage current
IGSS
100
nA 2.5
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 2 A
Semiconductor Group
2
07/96
BUZ 76 A
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
2.1 3 430 65 25 -
S pF 650 100 40 ns 8 12
VDS 2 * ID * RDS(on)max, ID = 2 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50
Rise time
tr
30 45
VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50
Turn-off delay time
td(off)
55 75
VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50
Fall time
tf
30 40
VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50
Semiconductor Group
3
07/96
BUZ 76 A
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1 300 2.5 2.7 11 V 1.4 ns C Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 6 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/s
Semiconductor Group
4
07/96
BUZ 76 A
Power dissipation Ptot = (TC)
Drain current ID = (TC) parameter: VGS 10 V
2.8 A
45 W
2.4
Ptot
35 30 25 20 15
ID
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8
10 5 0 0
0.6 0.4 0.2 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160
TC
TC
Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C
10 2
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 1
K/W A
ID
t = 24.0s p
ZthJC
10 1
100 s
10 0
/I
D
10 -1 D = 0.50
1 ms
DS
DS (o n)
10
0
=V
0.20 0.10 10 -2 0.05 0.02
R
10 ms
single pulse
0.01
10 -1 0 10
10
1
10
2
DC
V 10
3
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
07/96
BUZ 76 A
Typ. output characteristics ID = (VDS) parameter: tp = 80 s l
6.0 A 5.0
Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS
8.0
Ptot = 40W
k ih g f j
e
d
a
b
VGS [V]
a 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0
ID
4.5 4.0 3.5 3.0 2.5
b c
RDS (on)
b c d e f g h i j
6.0
5.0
4.0
c
3.0
2.0 1.5 1.0
a
k 10.0 l 20.0
2.0 1.0 VGS [V] =
a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5
d e gf ih j k
0.5 0.0 0 4 8 12 16 20 24 28 V 36 0.0 0.0
h i j k 8.0 9.0 10.0 20.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
A
4.5
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 s VDS2 x ID x RDS(on)max
6.0 A 5.0
parameter: tp = 80 s, VDS2 x ID x RDS(on)max
4.5 S
ID
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10
gfs
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0
1.0
2.0
3.0
4.0
VGS
A ID
5.5
Semiconductor Group
6
07/96
BUZ 76 A
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 2 A, VGS = 10 V
10
Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
RDS (on)
8 7 6 5 4 3 2 1 0 -60
98%
VGS(th)
3.6 3.2 2.8 2.4 2.0
typ
2%
98% typ
1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160
-20
20
60
100
C
160
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
10 2
nF C 10 0
A
IF
10 1
Ciss
10 -1
10 0
Coss
Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
10 -1 0.0
Crss
10 -2 0
5
10
15
20
25
30
V VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
07/96
BUZ 76 A
Avalanche energy EAS = (Tj ) parameter: ID = 3 A, VDD = 50 V RGS = 25 , L = 35 mH
190 mJ
Typ. gate charge VGS = (QGate) parameter: ID puls = 6 A
16
V 160
EAS
140 120 100 80
VGS
12
10 0,2 VDS max 8 0,8 VDS max
6 60 4 40 20 0 20 2 0 40 60 80 100 120 C 160 0 4 8 12 16 20 24 nC 30
Tj
Q Gate
Drain-source breakdown voltage V(BR)DSS = (Tj )
480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 C 160
Tj
Semiconductor Group
8
07/96
BUZ 76 A
Package Outlines TO-220 AB Dimension in mm
Semiconductor Group
9
07/96


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